Lateral carrier confinement of GaN-based vertical-cavity surface-emitting diodes using boron ion implantation

Abstract

Boron ion implantation, which is used for confining carriers in gallium nitride (GaN)-based vertical-cavity surface-emitting laser diodes (VCSELs), was studied. Detailed analysis indicated that boron ion implantation of GaN increases GaN’s absorption coefficient from zero to 800 cm−1 and its refractive index from 2.45 to 2.51 at the surface of the wafer at a wavelength of 453 nm. The depth profile of boron obtained by secondary ion mass spectroscopy (SIMS) showed an exponential decrease toward the bottom of the wafer. Assuming that the changes in optical parameters caused by implantation are proportional to the concentration of boron in GaN, the boron ion implantation applied to GaN-VCSELs causes optical absorption of 0.04% per round trip in the cavity and extends the light path of the cavity by 2.2 nm, both of which apparently have negligible impact on the operation of GaN-VCSELs. The implanted boron ions pass through the active regions, introducing non-radiative recombination centers at the edges of those active regions made of InGaN multi-quantum wells, which, however, does not cause significant current injection loss.