Lateral Capacitance–Voltage Method of NanoMOSFET for Detecting the Hot Carrier Injection

Atabek E Atamuratov,Kyandoghere Kyamakya,Ahmed Yusupov,Zukhra A Atamuratova,Jean Chamberlain Chedjou

doi:10.3390/app10217935

Atabek E Atamuratov, Kyandoghere Kyamakya + Show 3 more

Open Access

https://doi.org/10.3390/app10217935

Copy DOI

Abstract

In this paper, the dependence of the capacitance of lateral drain–substrate and source–substrate junctions on the linear size of the oxide trapped charge in MOSFET is simulated. It is shown that, at some range of linear sizes of the trapped charge, the capacitance of lateral junctions linearly depends on the linear size of the trapped charge. The dependence of the difference between drain–substrate and source–substrate capacitances on the linear size of trapped charges is also simulated. The revealed dependence can be used in measurements to estimate the linear size of oxide trapped charges induced by hot carrier injection, which can occur during MOSFET operation at defined conditions.

Highlights

During operation, a MOSFET is exposed to different types of electrical stresses, which can lead to a degradation of its characteristics
The simulation result reveals that embedding a positive charge led to decreasing the threshold voltage, which depended on the size of the local charge (Figure 1)
In the considered range, decrease of the threshold voltage with an increase in the linear size (d) of the oxide-charged area was the decrease of the threshold voltage with an increase in the linear size (d) of the oxide-charged area was in qualitative agreement with the experimental results in [28]

Summary

Introduction

A MOSFET is exposed to different types of electrical stresses, which can lead to a degradation of its characteristics Among these are noticeably some inherent and well-known aging effects related to hot carrier injection (HCI) [1,2], bias temperature instability (BTI) [3,4], and OFF-state stress [5,6], as well as the transient effects of random telegraph noise (RTN) [7,8], which must be considered (or taken into account) into the design of digital and analog integrated circuits. Some hot holes can be injected into the oxide [13,14,15,16,17]

Objectives

Methods

Results

Conclusion