Abstract
The lateral mode profile of pulsed broad ridge 405nm (Al, In)GaN laser diodes grown on GaN and SiC substrates, respectively, is investigated by temporal and spectral resolved scanning near-field optical microscopy. During the first microsecond of the pulse, we observe changes both in the spatial mode profile and in the spectral regime caused by thermal and carrier induced modification of the waveguide refractive index, before stable filaments build up. In quasi-cw operation, a correlation between the lateral mode profile and the corresponding spatial resolved longitudinal mode pattern can be found. The results show that different filaments have different effective refractive indices and thus build up separate longitudinal mode combs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
