Abstract
The reliability degradation of HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> -based devices under heavy ion irradiation is still an open question. In this letter, the ultrathin amorphous HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> gate stacks were irradiated by different types of swift heavy ions (SHIs). The fine structure of latent track in amorphous HfO <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sub> is crystalline phase along the particle trajectory. The effects of latent track on the electrical properties were characterized by the high frequency capacitance-voltage (C-V) and the leakage current density-voltage (J-V) measurements. The quantitative relationship between microstructure changes and electrical properties provides a new method to estimate the threshold of the electronic energy loss ((dE/dx) <sub xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">e</sub> ) for crystallization and allows for prediction of device sensitivity to SHIs irradiation.
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