Abstract
The microstructure of 265, 402 and 710 MeV Bi ion induced latent tracks in amorphous thin films of silicon nitride is studied using HRSTEM combined with EELS techniques. The results are compared with latent ion tracks in 220 MeV Xe and 710 MeV Bi irradiated polycrystalline silicon nitride, which was amorphized as a result of irradiation with swift heavy ions only. The results suggest that the track sizes are weakly dependent on defect structure of Si3N4. 710 MeV Bi ions induce tracks with radii that are similar in both amorphous and radiation-amorphized Si3N4, 1.5 ± 0.3 nm and 1.4 ± 0.1 nm, respectively. The situation for Xe is not as clear cut most likely due to the much higher irradiation fluence as compared to Bi.
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