Latent image characterization by spectroscopic reflectometry in the extreme ultraviolet

Abstract

Background: In the extreme ultaviolet (EUV) lithography process the performance of the photoresist is a crucial factor regarding the quality and critical dimensions of the fabricated structures. Aim: The characterization of the latent image structures in photoresists during the process steps before the development of the resist is key to understand the relation between the material of the resists, the selection of process parameters, and the resulting quality of fabricated structures. Approach: Spectroscopic EUV reflectometry is a nondestructive metrology technique that measures the broadband reflectance of samples in the EUV spectral range and under grazing incidence angles. The technique offers a combination of high sensitivity to nanoscale structural parameters of periodic structures as well as a high sensitivity to the material composition samples, enabling the characterization of latent images of periodic structures. Results: Measurements of the reflectance of an EUV-exposed and unexposed photoresist reveal the contrast in optical constants after the resists are treated with a post-exposure bake as well as shrinkage of the resist layer thickness. Based on this data, simulative studies on latent images of periodic grating structures are conducted showing the possibility to extract information on the structure parameters including the latent image profile and surface topography. Conclusion: Spectroscopic EUV reflectometry shows to be sensitive to the contrast of exposed and unexposed photoresist which commends the technique to be adequate for the characterization of latent images in photoresists.