Latent heat effect on growth rate in the traveling liquidus-zone method

Abstract

In order to obtain a homogeneous crystal by using the traveling liquidus-zone (TLZ) method, a conventional one-dimensional model is used to determine an appropriate sample translation rate. Although the conventional model predicts the appropriate translation rate, the latent heat effect is unknown since the conventional model is based on pure solution growth. Therefore, a new model including the latent heat is introduced to investigate the latent heat effect. By considering the new model, the maximum latent heat effect αmax is obtained. The αmax is negligibly small under the condition that the InAs mole fraction is far enough from 0 or 1 in the case of an InGaAs crystal. In order to estimate the actual latent heat effect α, one-dimensional numerical simulations with and without the latent heat are carried out. From the numerical results, the applicable limit of the TLZ method is discussed in the case of In0.3Ga0.7As crystals. The growth rate, which is regarded as a pure melt growth, is also discussed by extrapolating the α dependency.