Abstract
We investigated the photoluminescence from InP quantum dots incorporated in (Ga${}_{0.51}$In${}_{0.49}$)P microdisk structures. With increasing pump power we observe a transition to stimulated emission indicated by the S shape of the input-output curve. This transition is accompanied with a concentration of the emission to one or a few modes exhibiting quality factors on the order of ${10}^{4}$ at transparency. Time-resolved measurements show that at the same time the photoluminescence decay time considerably decreases. Furthermore, in the transition regime the linewidth of the lasing mode is reduced and the second-order photon correlation function exhibits a reduction of fluctuations as previously reported for lasers with InAs quantum dots in photonic crystal, microdisk and micropillar cavities as the gain medium. The experimental findings are compared with the predictions of a microscopic theory.
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