Abstract
The lasing properties of InGaAsP crescent-shape mesa substrate buried heterojunction (CMSB) lasers emitting at 1.3 μm are described. Threshold currents as low as 20 mA have been observed with a temperature sensitivity T0 = 97 °C. An external differential quantum efficiency (two facets) of up to 54% was observed. This combination of the characteristics is directly attributed to the device structure which is specially designed to decrease lateral leakage current. Single transverse and longitudinal mode operation was realized with output powers of at least 5 mW per facet.
Full Text 
Sign-in/Register to access full text options
Sign-in/Register to access full text options 
Paper version not known
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a call
