Abstract
In this paper discussions based on the result of a pump-probe experiment are given on a possibility of application of the emission from Ce doped CaGa2S4 to production of a new laser. Existence of enough gain for laser action was clearly demonstrated from the analysis of the experimental result. Using the phonon-terminated character of this emission, construction of an unique laser having wide wavelength tunability covering violet to green region is thought to be possible. As far as optically pumped lasers are concerned, the only problem to be solved is to grow good single crystals having a suitable size (1×1×1 mm3 or more). In order to realize injection type semiconductor lasers with this material, we have to study conduction type and conductivity control technique together with a suitable epitaxial growth method for obtaining thin films of this material. It is pointed out that Ce doped SrGa2S4 and BaGa2S4 are also strong candidates for construction of similar lasers.
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