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Abstract
We report electrically injected lasing in GaAs quantum dots (QDs) grown on GaAs(001) bydroplet epitaxy. High-quality GaAs QDs with superior uniformity are formed usingimproved growth techniques involving the insertion of a two-dimensional layer, control ofthe As flux for GaAs crystallization, and thin AlGaAs layer capping with high-temperatureannealing. The QDs show ultra-narrow luminescence with a linewidth of 20 meV.Ground-state lasing from a laser diode containing fivefold-stacked QD layers is observed atlow temperature under pulsed operation.
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