Abstract
A Raman laser based on a high-$Q$ nanocavity in silicon has potential as a light source in photonic integrated circuits, but it is unclear how the significant enhancement of nonlinear optical effects by the cavity affects the lasing dynamics. Spectrally resolved time-domain measurements reveal that free carriers generated by two-photon absorption induce various dynamical effects during the initial lasing process, even at very low threshold power. Surprisingly, the Raman laser signal exhibits large oscillations at high excitation power. This insight will be useful for incorporating such Raman nanocavity lasers into device designs.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
