Abstract
The authors report the optical characteristics of GaSb∕GaAs self-assembled quantum dots (QDs) embedded in an InGaAs quantum well (QW). Variations in the In composition of the QW can significantly alter the emission wavelength up to 1.3μm and emission efficiency. Lasing operation at room temperature is obtained from a 2-mm-long device containing five stacked GaSb QDs in In0.13Ga0.87As QWs at 1.026μm with a threshold current density of 860A∕cm2. The probable lasing transition involves electrons and holes confined in the QW and QDs, respectively, resulting in a large peak modal gain of 45cm−1. A significant blueshift of the electroluminescence peak is observed with increased injection current and suggests a type-II band structure.
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