Abstract

The lasing characteristics of a single ZnO nanowire and nanosheet were investigated for an application to ultraviolet laser diode. ZnO nanowires and nanosheets were synthesized on a silicon substrate by a CVD method, and then those ZnO nanosheets were examined by a photoluminescence method with a third-harmonic Nd:YAG laser (355 nm, 5 ns). The observed emission spectra from both a single ZnO nanowire and nanosheet showed the obvious lasing characteristics having mode structure and a threshold for lasing which were measured to be 80 kW/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> , and 47 kW/cm <sup xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink">2</sup> . Those threshold would be low enough for lasing by an electrical pumping for ultraviolet laser diode.

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