Abstract
InGaP/GaAs/InGaAs heterostructures were grown by MOCVD hydride epitaxy at atmospheric pressure. They were used in injection semiconductor lasers emitting at 0.92–1.02 μm. The output power of one cleaved facet was up to 750 mW when the width of the active stripe was 100 μm. The external differential quantum efficiency reached 42%. Linear laser arrays, consisting of five emitting stripes, were capable of supplying radiation powers up to 2 W continuously and were suitable as pump sources for solid-state lasers. Single-mode narrow-stripe (5 μm) lasers had an output power up to 25 mW from one cleaved face. Additional transverse modes were emitted when the output power was increased to 30 mW. The characteristic features of the technology used in fabrication of these lasers are described.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
