Abstract
Abstract The process of laser recrystallization of polysilicon layers deposited on thermally oxidized silicon wafers and the structure of the obtained layers have been studied. The recrystallization is carried out by CW YAG laser radiation. The piezoresistive properties of n- and p-type poly-Si layers with different carrier concentrations have been investigated. The longitudinal gauge factor for p-type layers changed from 26 to 55 with a decrease of carrier concentration from 10 20 to 10 17 cm −3 . The temperature coefficients of resistivity and the gauge factor for the investigated layers have been determined. Miniature piezoresistive pressure and force sensors with polysilicon resistors have been constructed.
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