Laser-induced thin film formation from a gaseous mixture of trimethylsilylacetylene and methyl acrylate

Abstract

Under irradiation with N2 laser light, gaseous trimethylsilylacetylene (TMeSiA) and a gaseous mixture of TMeSiA and methyl acrylate (MA) produced thin films on an incident optical quartz window of an irradiation vessel. The product yield decreased with increasing partial pressure of TMeSiA. From the analysis of FT-IR spectra and X-ray photoelectron spectra of the deposited films, it was shown that SiC bond of TMeSiA was cleaved by a two-photon absorption of N2 laser light to produce trimethylsilyl radical and the silanes, R(CH3)SiCH2 (R: H3C, CHC). Trimethylsilyl radical reacted with MA at CC and CO bonds to produce SiC and SiO bonds in the film deposited from the gaseous mixture. The silanes were polymerized in each other to produce a thin film from pure TMeSiA vapor. Under irradiation with a medium pressure mercury lamp, a gaseous mixture of TMeSiA and MA produced aerosol particles in addition to the film. Polymeric species of TMeSiA was more involved in the aerosol particles rather than in the film, suggesting that collisionally induced chemical reaction takes place efficiently between excited MA and TMeSiA molecules.