Abstract

It has been proven that many types of radicals released from atmospheric-pressure plasma can provide effective surface treatment and modification of materials. However, the method for measuring radicals generated with atmospheric-pressure plasma and their reaction mechanisms have not become clear in material surface processing. The OH radical distribution was measured successfully in nonequilibrium atmospheric-pressure dc pulse discharge plasma jet by use of the laser-induced fluorescence system. The OH transition [A2Σ+(v' = 1) ← X2Π(v = 0)] at 282 nm was used to monitor the ground-state OH radicals.

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