Abstract
It has been proven that many types of radicals released from atmospheric-pressure plasma can provide effective surface treatment and modification of materials. However, the method for measuring radicals generated with atmospheric-pressure plasma and their reaction mechanisms have not become clear in material surface processing. The OH radical distribution was measured successfully in nonequilibrium atmospheric-pressure dc pulse discharge plasma jet by use of the laser-induced fluorescence system. The OH transition [A2Σ+(v' = 1) ← X2Π(v = 0)] at 282 nm was used to monitor the ground-state OH radicals.
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
