Abstract
Maskless patterning of aluminum has been achieved by using visible light from a copper bromide vapor laser for pyrolytic decomposition of trimethylamine alane (TMAA) on silicon monocrystalline wafer. The analysis of the resultant stripes included scanning electron microscopy, Auger electron spectroscopy, Talystep, and electrical resistance measurements. The crystalline structure of the layers showed well-defined grains. The Auger electron spectra indicated pure aluminum layers with small quantities of oxygen and carbon. The low resistivities of aluminum stripes deposited from TMAA (up to 4.0 μΩ cm) make it a promising precursor for metallization with aluminum and especially for chemical vapor deposition enhanced with a pulsed visible laser.
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