Abstract
Using excellent host of Gadolinium Vanadate (GdVO<sub>4</sub>), Tm<sup>3+</sup>:GdVO<sub>4</sub> laser has many advantages, such as high heat conductivity, little thermal effect, large stimulated emission cross-section, and low laser oscillation threshold. And due to its stronger and broader absorption spectrum in the 800 nm region, highly-efficient AlGaAs laser-diode (LD) can be adopted as pump source. In this paper, the properties of various kinds of Tm<sup>3+</sup>-doped laser crystals are compared in the first place. Then by describing the energy transmission process of Tm<sup>3+</sup>-doped system at the 2 μm band and establishing the quasi-three-level rate equation, we obtain the expression of threshold pump power and slope efficiency. Moreover, considering thermal lens effect of GdVO<sub>4</sub>, the three-mirror folded resonator is analysed using the method of transmission matrix and optimized numerically. A low-threshold, high-power, and good-stability LD double-end pumping Tm<sup>3+</sup>:GdVO<sub>4</sub> solid-state laser is designed by the guidance of the optimized resonator parameters. We obtained a fundamental mode 1920 nm laser output.
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