Abstract
Photochemical surface and interface modifications of Al thin films on silica glass were successfully carried out using a 157 nm F2 laser for micropatterning. The surface modification phenomenon was discussed in relation to by changing the laser wavelength using a 193 nm ArF laser or a 266 nm neodymium-doped yttrium aluminum garnet (Nd:YAG) laser. The ArF laser could induce the surface modification of Al thin films to form a protective Al2O3 layer resistant to KOH aqueous solution, similarly to the F2 laser. However, the mechanical hardness of the ArF-laser-irradiated sample was clearly lower than that of the F2-laser-irradiated sample. The origin of the surface modification was examined by irradiating the F2 laser in vacuum. The interface modification phenomenon was analyzed by X-ray photoelectron spectroscopy in the three cases. The adhesion strengths of the samples were also compared. The 266 nm Nd:YAG laser was not effective for the present photochemical modifications.
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