Abstract
Propagation of ultrasonic signals induced by nanosecond laser pulses in porous silicon (por-Si) is considered from both the theoretical and the experimental viewpoints. The experimental samples are por-Si layers with 5-to 40-µm thickness and porosity of 50–75%; these layers were formed on a single-crystal silicon substrate by electrochemical etching. It is shown that the suggested ultrasonic laser method allows both the thickness and the porosity of a layer to be determined with the respective accuracies of no worse than 1 µm and 5%.
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