Abstract
A laser direct patterning technology based on a trench method is originally proposed for porous Si device formation, which is fabricated on an ${n}$ -type Si layer of a pn -diode structure. A moat-like trench designed to be a closed cylindrical surface and deep enough to reach the pn -junction separates the pn -diode into an inner part and an outer part. The experimental results clearly show that the patterned porous Si devices can be performed precisely on the inner/outer part only. No mask, deposition, light source and photolithography process are required during the electrolytic etching. In the study, the evidence of direct patterning of porous Si device at desired areas and its related distinct porosity structures are verified by scanning electron microscope and UV photoluminescence photos.
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