Abstract
A systematic study of laser treatment of the channel of an amorphous silicon junction field effect transistor (JFET) is presented, using a Nd:YLF laser at 523 nm and power ranging from 20 to 635 mJ/ cm 2 . A threshold energy equal to 150 mJ/ cm 2 is observed. Above this value higher power gives higher channel conductivity and reverse current of the gate–drain and gate–source junctions. Furthermore, the increase of conductivity corresponds to a lack of channel modulability due to an increase of defects and/or active dopant, which hampers the depletion of the channel.
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