Abstract

ABSTRACTWe applied laser THz emission spectroscopy to study the effects of monolayer graphene on the THz emission from InAs. THz emission from graphene/InAs varies linearly with the laser excitation power in the low-intensity excitation regime. We found that unlike in graphene/SI-InP junctions, graphene and O2 adsorbates on graphene have no significant effect on the THz emission from graphene/InAs junctions because the THz radiation mechanism in InAs is by the photo-Dember effect, whereas for SI-InP is by the surge current effect. There is also a slight enhancement in the THz emission from both bare InAs and graphene/InAs by UV illumination, which is probably due to the additional photoexcited carriers by UV that somehow enhances the photo-Dember field.

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