Abstract
We describe progress towards a precision measurement of the 2s Lamb shift in hydrogen-like silicon. This will use the Oxford electron beam ion trap (EBIT) as a source of highly charged ions for laser spectroscopy. We have successfully trapped silicon ions in the EBIT, and are determining the optimum operating conditions required to maximize the number of Si13+ ions. The laser system required for the experiment is currently under development; the first stage of this work involves locking a frequency-stabilized laser operating at 734 nm to a high-finesse enhancement cavity.
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