Abstract
ABSTRACTLaser Solid-phase-epitaxy (SPE) of amorphous Si1−xGex layer on Si formed by the molecular beam deposition (MBD) method was successfully performed by cw-Kr laser irradiation. Laser SPE of small areas was achieved by Laser irradiations of short time durations and high power densities The strain in the Laser-SPE layers was evaluated by micro-Raman scattering. It is demonstrated that strained SiGe layers on Si can be grown in the central area of 10μm size within the area crystallized by Laser- SPE at a substrate temperature of 400°C after preannealing at 350°C for 15 to 30 minutes.
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