Abstract
We have found recently that there are optimum values of laser irradiation time and spot size for laser Solid Phase Epitaxial (SPE) growth of GaAs. The amorphous GaAs layers with a thick-ness of 600 @/Ar35@/ used in the study were produced by P+ ion implantation. Both 1.7W Ar ion laser and 4W Kr ion laser irradiations were used. The optimum values for SPE of the time and spot diameter were 67ms and 1 μm for the Ar ion laser and 17ms and 10 μm for the Kr laser. The 1 μm spot diameter is the smallest ever reported. For the Kr ion laser irradiation under these conditions, the speed of the laser SPE growth was as high as 30 μm/sec and the tempera-ture was as low as 560°C. The quality of the laser SPE growth layers was evaluated by the peak heights of the LO phonon Raman lines.
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