Abstract
<para xmlns:mml="http://www.w3.org/1998/Math/MathML" xmlns:xlink="http://www.w3.org/1999/xlink"> It is shown that laser sensitivity mapping at the cell level can be used to reconstruct and analyze the SEE cross-section. It resolves such conundrums as data pattern variations in the SEE sensitivity of memories. The pattern of SEE sensitivity revealed by the laser maps is shown to be reflected in features of ion beam test data. </para>
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