Abstract
Laser pump and X-ray probe core-level photoemission experiments probe surface photovoltage transients on p-type Si(111) surfaces. The data are consistent with a picture where the dynamics of mobile surface charge dominate the photovoltage shift, with changes in the surface-states charge density of only secondary importance. A value for the equilibrium band bending is determined, which suggests that a residual oxide layer reduces the density of surface states.
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