Abstract
We present a model representing the intensity redistribution of a laser when propagating inside an n-InSb semiconductor material. The intensity-dependent behavior of the refractive index of the semiconductor is responsible for the laser focusing, which leads to laser intensity redistribution. The beam width parameter (f) equation is obtained assuming paraxial approximations. Numerical simulations are performed to measure the variation in the intensity of the laser. A significant change in laser intensity is observed. We predict that our model may be helpful in plasma acceleration.
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