Abstract
Low temperature laser processing of W using WF 6 and SiH 4 is discussed. This process can be applied with limited thermal budget to various substrates, giving the possibility of depositing thin films on fragile substrates like polyimide or GaAs. In a direct writing mode, an Ar + laser and a diode laser have been used to produce WSi x with various controlled line profiles on polyimide and TiN. Best resistivities are between 40 and 80 μω·cm and the composition W/Si vary from 1.4 to 1.8. Excimer laser induced deposition of W on GaAs for making Schottky contacts has also been investigated. This process yields pure α-W deposits with resistivities of 20 μω · cm.
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