Abstract
IR laser-induced SF 6-photosensitized decomposition of gaseous 2,2-diethenylhexamethyltrisilane yields acetylene, volatile organylsilanes (vinyltrimethylsilane, trimethylsilane) and organyldisilanes (1,1- and 1,2-bis(trimethylsilyl)ethenes and 3,3-dimethyl-3,5-disilacyclopent-4-ene), and affords chemical vapour deposition of solid polycarbosilane film. The mechanism of the decomposition is discussed on the basis of quantification of gaseous products and scavenging experiments with buta-1,3-diene and revealed to involve both molecular and radical steps. The first experimental evidence on direct extrusion of central silylene unit from trisilanes is reported.
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