Laser Patterned Junctionless In-Plane-Gate Oxide Thin-Film Transistors Arrays

Abstract

A novel laser scribing process was successfully developed in fabricating junctionless low-voltage oxide-based thin-film transistors (TFTs) arrays without any mask and photolithography steps at room temperature. Such junctionless TFTs feature that the channel and the source/drain electrodes are of the same thin indium-tin-oxide films without any intentional source/drain junction deposition process. Effective field-effect modulation of the drain current has been realized. Such junctionless in-plane-gate TFTs exhibit a good electrical performance with a small threshold voltage (-0.7V), a small subthreshold swing (0.25V/decade), a high mobility (~12.6cm2/Vs), and a large on/off ratio (>106), respectively. The developed laser scribing technology is highly desirable in terms of the low-cost fabrication process.