Abstract
GaAs melting simulations with a pulsed ruby laser are reported. The presence of a thin metal layer deposited on the GaAs surface gives rise to a reduction in the melting threshold and to an increase of melted depths when compared with nude GaAs surfaces. Melting thresholds around 0.3 J/cm2 for nude GaAs surface and slightly below 0.25 J/cm2 for GaAs covered with a 120 A tin layer are predicted in reasonable agreement with experimental results.
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