Abstract
The development of flexible electronics, better heat dissipation capabilities, increased LED light extraction efficiency, and the implementation of inverted barrier N-polar high electron mobility transistor (HEMT) for power electronics are all made possible by adopting laser lift-off (LLO), a technology that enables the movement of discrete III-N elements onto any substrates which are otherwise not attainable. In this paper, we focus on evaluating the LLO mechanism, its application for III-N epilayers and devices, and assessing their structural and electronic characteristics to give an overview of the advancement in LLO technology for III-N microelectronics.
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