Laser Interference Nanolithography with a 405nm Fiber Semiconductor Laser

Abstract

This paper presents a method of laser interference nanolithography for the formation of interference patterns on the resist using a fiber semiconductor laser with a wavelength of 405nm. In the method, surface pattern structures are fabricated through the control of the incident angles of two interfering beams, the exposure dose of laser radiation and the development time. The angle adjustment becomes more convenient and the influence of environmental variations on the system has been reduced due to the use of fiber optic components. In the work, a feature size of down to 63nm and a pattern period of 215nm were achieved. The experimental results have shown that the method can be used for low cost micro and nano fabrication of periodical surface patterns with the features of low cost, simplicity and flexibility.