Abstract
TlInSe2 films with thickness from 10 to 200 nm were thermally evaporated on silicon and silicate glass substrates. Micro-Raman spectra measured at a moderate excitation (532 nm, 4 kW/cm2) confirm the amorphous character of the films. Narrow features revealed in the spectra at an excitation power density of 40 kW/cm2 show the evidence for the formation of TlInSe2 , TlSe, and In2Se3 crystallites in the laser spot. For thin (10–30 nm) films, the rod-shaped TlInSe2 crystallites are shown to be oriented within the film plane. The crystallite formation is governed by the thermal effect of the tightly focused laser beam.
Sign-in/Register to access full text options 
Talk to us
Join us for a 30 min session where you can share your feedback and ask us any queries you have
Schedule a callDisclaimer: All third-party content on this website/platform is and will remain the property of their respective owners and is provided on "as is" basis without any warranties, express or implied. Use of third-party content does not indicate any affiliation, sponsorship with or endorsement by them. Any references to third-party content is to identify the corresponding services and shall be considered fair use under The CopyrightLaw.
