Abstract
Transformation of TiSi2 on p-type (100) silicon substrates in two substrate conditions (crystalline-Si and 45 nm amorphous Si) induced by laser annealing was investigated. The formation of titanium silicides was characterized using x-ray diffraction and sheet resistance measurement. The first silicide phases observed were Ti5Si4 and C49 TiSi2 in crystalline-Si substrates, followed by transformation of C54 TiSi2 phase at higher laser energy densities of 1071 and 1250 J/cm2. In the case of the specimens using amorphous-Si substrates, the first silicide phase observed was Ti5Si3, followed by the coexistence of C49 TiSi2 and C54 TiSi2 at higher laser energy densities of 938 and 1000 J/cm2. It was noted that in general the formation of C54 phase occurred at a lower laser energy density on the amorphous-Si substrate than that on crystalline-Si substrate, indicating an easier C54 formation on the amorphous state. Sheet resistance measurements showed that the specimen containing only C54 silicide phase had the lowest resistivity.
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