Abstract
The changes in the optical and holographic recording properties of amorphous As x Se 1- x films with 0 ≤ x ≤ 0.2 under laser irradiation have been measured. The dependence of the transmissivity and diffraction efficiency on the irradiation energy density shows two qualitatively different regions. Below an energy density threshold, E th, only small changes in the local structure of the system can be detected. In this low- E region, the transmissivity varies reversibly with exposure. Qualitative explanation of the observed behavior may be based on associating such with alteration of deep defect states. Above E th, the changes were attributed to crystallization transformation. The Raman spectra reveal the progressive transformation of the system from amorphous into the crystalline phase under laser irradiation.
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