Abstract
Our work investigates the precise tuning of InGaAs quantum dots (QDs) embedded into microposts by leveraging HfO2 crystallization-induced micro-strain via laser annealing. We investigate the efficacy of laser annealing power as a parameter for spectral control, achieving a notable blue shift of QD emissions of up to 5 meV. Through comprehensive Raman thermometry, we reveal consistent dependencies in laser-induced heating relative to micropost diameter, with larger microposts exhibiting superior heat dissipation capabilities and smaller tuning range. For instance, a 5.0 μm micropost demonstrates a maximum local temperature increase of 260 K at 1.82 mW of annealing power, compared to 435 K for a 1.1 μm diameter micropost under the same conditions. By correlating local temperatures derived from the longitudinal optical phonon linewidth of the Raman spectra, with QD emission line blue shift at specific laser powers, the tunability across differing post diameters is studied. Our findings underscore the potential of strain-tuning QDs through laser-induced HfO2 crystallization, offering avenues for scalable resonant single-photon sources applicable in superradiance and multi-photon interference scenarios.
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