Abstract
Original observation of new graded band gap structures formed on the surface of elementary Si semiconductor at studying the optical properties of Si nano-hills formed at the SiO 2/Si interface by pulsed Nd:YAG laser irradiation is reported. The self-organized nano-hills on Si surface are characterized by a strong photoluminescence in the visible range of spectrum with a shoulder extended to the long-wave part of the spectrum. The feature is explained by the quantum confinement effect in nano-hills–nano-wires of gradually changing diameter.
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