Abstract
Formation of thin crystalline layers of cobalt suicide, CoSi 2, deposited by coevaporation of cobalt and silicon mixtures on SiO 2/Si substrates, has been attained by Q-switched YAG:Nd and CO 2 lasers. The electrical and optical properties of the CoSi 2 layers have been studied by simultaneous laser irradiation. It is shown that high-quality resistive crystalline CoSi 2 films can be obtained by treatment with CO 2 laser radiation of 2 to 8 MW cm −2 intensity. Besides, the resistance of the layer decreases by a factor of nine. When such a layer is subjected to Q-switched YAG:Nd laser radiation of 20–35 MW cm −2 intensity, the magnitude of the resistance increases by a factor of three due to the formation of clusters of vacancies in CoSi 2. The CoSi 2 phase and rise of concentration of vacancies are determined by X-ray diffraction. A correlation between changes in optical and electrical properties as well as structural changes of the suicide layer is found. It is shown that the change in optical parameters of the resistive film subjected to laser treatment can be used for both remote resistivity measurements and quality control.
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