Abstract
It has been recently established that the crystallinity of ion-implanted GaAs samples can be restored by using a low-power pulsed-laser annealing (LPPLA) technique. In this paper we report an improvement of carrier activation achieved after low-temperature processing (added to LPPLA) at temperatures low enough to avoid substantial losses of As. By using this combination of techniques we have reduced the sheet resistivity to values comparable with those obtained by standard techniques without any specimen encapsulation (or similar) processing. The pretreatment by LPPLA seems to reduce the Zn activation threshold down to values which prevent the sublimation of As.
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