Abstract
AbstractPhotoemission electron microscopy is used to probe photon‐induced oxygen vacancies generated on TiO2 (110)‐(1×2) surfaces. An increased oxygen vacancy concentration within the irradiated region leads to an increase of local photoelectron emission. The local oxygen deficient region can be compensated by exposing the surface to molecular oxygen at 1×10–5 Torr, or via surface diffusion at 450 K in vacuum. The surface diffusion coefficient is estimated to be on the order of 10–12 m2/s. Photoemission electron microscopy allows in situ studies of surface electronic defect formation and removal. (© 2006 WILEY‐VCH Verlag GmbH & Co. KGaA, Weinheim)
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