Abstract
ABSTRACTAmorphous samples of Se58Ge27Pb15 and Se58Ge24Pb18 glasses were prepared using the melt quenching method. Thin films of samples were deposited using the vacuum evaporation method. These films were illuminated with Nd: YAG 532 nm green laser radiation. The samples were structurally characterised using X-ray Diffraction (XRD) and Energy-dispersive X-ray analysis. XRD indicated an increase in the crystallinity of samples on laser irradiation. The samples were optically tested through absorption, reflection and transmission spectra recorded on UV-vis spectrophotometer. The obtained values of energy band gap, refractive index, extinction coefficient and Urbach energy of the films were compared both before and after laser exposure. Furthermore, it was found that sample thickness also changes on laser irradiation. The band gap of the samples was found to decrease laser irradiation in Se58Ge27Pb15thin films, while for Se58Ge24Pb18 thin film samples, an unexpected increase in band gap was observed at a laser irradiation time of 8 min. The variable behaviour of band gap has been explained on the basis of Mott and Davis model and heteropolar bond formation.
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