Abstract
nitrides by laser-induced molecular beam epitaxy (LIMBE). The requirements for the formation of high-quality, monocrystalline layers are much stronger than those for polycrystalline films. We have modified and improved the conventional pulsed laser deposition. In our process, we use metallic targets in a nitrogen environment instead of ceramic or pressed powder nitrides and we employ picosecond laser pulses with high energy (>1 mJ) and high repetition rate (2 kHz). We have grown GaN, AlN, InN, InGaN and Mg-doped GaN on sapphire (0001).
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