Abstract
The photoconductivity (PC) spectra of CdZnTe (CZT) semiconductor solid solutions obtained from different manufacturers were investigated before and after irradiation with nanosecond laser pulses. Depending of energy density, irradiation of CZT crystals resulted in an increase in the photosensitivity, high-energy shift of the PC spectrum maximum and transformation of its profile. Laser processing with the certain energy densities improved homogeneity in the crystal surface area and provided equalization of structural characteristics in the surface region and bulk of the samples. Irradiation of CZT crystals pre-coated with an In electrode film caused rectification in the I-V characteristics because of the formation of a barrier structure. The application of the obtained In/CZT/Au diodes with low leakage current as X/γ-ray detectors is considered.
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