Laser-induced localized and maskless electrodeposition of micro-copper structure on silicon surface: Simulation and experimental study

Abstract

The simulation and experimental study of laser-induced localized and maskless electrodeposition of micro-copper (Cu) structures on p-type silicon (Si) surface is investigated. Firstly, calculations of the internal temperature field and free electron density distribution within Si under nanosecond laser irradiation were carried out, to demonstrate the selective enhancing effect of laser irradiation on electrical conductivity via the thermal and photoconductive manner. Secondly, experimental tests of the laser-induced electrodeposition of micro-wires, regional coatings and complicated patterns on Si surface without mask were performed successively, to illustrate the effectiveness of the proposed method. The experimental results indicate that laser pulse width and scanning space significantly affect the quality of the deposited layer. Specifically, dense and flat micro wires can be achieved when the laser pulse width is 100 ns, which is associated with a width of about 71.7 μm and thickness of around 10.9 μm. In addition, the laser scanning space should be well optimized to balance the uniformity of the regional coating and the stray deposition near the edge. Finally, the reduction of Cu2+ and deposition of Cu atom at Si surface were discussed, as well as the development of transitional layer, to supply an in-depth analysis of the electrodeposition mechanism.