Abstract
Si nanocrystals were synthesized and deposited on HOPG substrates. Using micro-Raman spectroscopy, we demonstrate that significant laser heating may be induced on Si nanocrystals, leading to an increase in the local temperature. As a consequence, the Raman peak position and linewidth are modified with respect to bulk Si. We also discuss the possibility that a high temperature increase may favor observation of surface phonon modes.
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